IGBT Modules for Ultrasonic Generators
Speed and power in ultrasonics
IGBT modules represent the alternative to power MOSFETs in the realization of high-frequency generators, commonly used by most industry builders. The use of IGBTs has many advantages including reducing bulkheads on the board, the number of components, and the size of the package so that designers can increase system efficiency and efficiency while lowering the overall cost. IGBTs are powered high-voltage bipolar switching devices that combine high input impedance of the MOSFETs with very low switching losses in the on state of a bipolar transistor.
In our ultrasonic cleaning industry, the choice and programming of the driver is crucial for the use of IGBTs, which must adjust the pulse speed while protecting against overloads and short circuits.
That is why these components are only adopted by us in the MOG series generators, where we adopted a 32-bit microprocessor of the MICROCHIP, which, together with an infinity of other functions, has the task of piloting the driver.
With IGBT modules you can reach power up to 120 A to 600 V, unthinkable only a few years ago.
Technical note of clarification
The isolated gate bipolar transistor (IGBT) is a three-terminal component: Gate, Collector and Emitter. It can be seen as the synthesis of the best features of a bipolar transistor and an MOS.
The IGBT is used as a switch in applications with high voltage and current values. Compared to other semiconductor power devices its main strengths are:
- a high switching speed
- the ability to handle very high voltages and currents
- the (relative) ease of driving
- the ability to put multiple devices in parallel to increase the current
Below are two symbols often used for this component:
- the first one is a simplified symbol
- the second, more adherent to regulations, highlights the presence of an anti-parallel diode
